ISC 2SC1929

Inchange Semiconductor
Product Specification
2SC1929
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·High VCEO
·Large PC
APPLICATIONS
·AF output for direct main operation TV
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
6
V
0.4
A
1
A
25
W
IC
Collector current
ICM
Collector current-Peak
PC
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1929
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=5mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=500mA; IB=50mA
2.0
V
VBEsat
Base-emitter on voltage
IC=0.1A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=300V; IE=0
10
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
35
hFE-2
DC current gain
IC=0.3A ; VCE=5V
30
Transition frequency
IC=0.1A ; VCE=5V
fT
‹
CONDITIONS
hFE-1 Classifications
S
R
Q
P
35-70
60-120
100-200
165-330
2
MIN
TYP.
MAX
UNIT
330
80
MHz
Inchange Semiconductor
Product Specification
2SC1929
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3