Inchange Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ・Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ・Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ・Designed for use in high-voltage ,highspeed ,power switching in inductive circuit, particularly suited for 115 and 220V switchmode applications such as switching regulator’s ,inverters,,DC-DC and converter PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 体 导 半 固电 Emitter EM S E NG A H C IN R O T UC D N O IC Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 500 V Collector-emitter voltage Open base 400 V Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 15 A IB Base current 3.5 A PD Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ MAX UNIT 3.125 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(SUS)CEO Collector-emitter sustaining voltage IC=3.0A ; IB1=0.6A,L=1mH VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.2 V ICBO Collector cut-off current VCB=400V ;IE=0 10 μA ICEX Collector cut-off current VCE=400V ;VBE(off)=-1.5V TC=125℃ 10 5.0 μA mA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 20 80 hFE-2 DC current gain IC=1.0A ; VCE=5V 20 80 hFE-3 DC current gain IC=3.0A ; VCE=5V 10 体 导 半 固电 Switching times ton tstg tf CONDITIONS EM S E G N A H Turn-on time INC Fall time hFE-2 Classifications M L K 20-40 30-60 40-80 2 TYP. MAX 400 UNIT V R O T UC D N O IC VCC=150V;IC=3.0A; IB1=-IB2=600mA; RL=50Ω Storage time MIN 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC