SavantIC Semiconductor Product Specification 2SC4242 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed APPLICATIONS ·For use in high voltage ,high speed; power switching in inductive circuit. ·Particulary suited for 115 and 220V switchmode applications such as switching regulators ,inverters ; DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 7 A ICM Collector current-Peak 14 A IB Base current 2 A PC Collector dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -50~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 3.125 UNIT /W SavantIC Semiconductor Product Specification 2SC4242 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 8 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 0.8 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.2 V ICBO Collector cut-off current VCB=450V ;IE=0 100 µA IEBO Emitter cut-off current VEB=8V; IC=0 100 µA hFE DC current gain IC=4A ; VCE=5V Transition frequency IC=0.4A ; VCE=10V 20 MHz Collector output capacitance f=1MHz ; VCB=10V 50 pF fT Cob CONDITIONS MIN TYP. MAX UNIT 10 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A, IB1=1A IB2=-1A; VCC=150V RL=30B 2 1.0 µs 2.5 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC4242 SavantIC Semiconductor Product Specification 2SC4242 Silicon NPN Power Transistors 4