Inchange Semiconductor Product Specification 2SC3181N Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SA1264N APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 120 V Collector-emitter voltage Open base 120 V Emitter-base voltage Open collector 5 V 8 A 0.8 A 80 W A H C IN IC Collector current IB Base current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3181N Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A 2.0 V VBE Base-emitter voltage IC=4A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 5 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=4A ; VCE=5V 35 fT Transition frequency IC=1A ; VCE=5V Cob Output capacitance 体 导 半 固电 55-110 A H C IN O 80-160 2 MIN TYP. MAX 120 UNIT V 160 30 MHz 190 pF R O T UC D N O IC IE=0 ; VCB=10V ;f=1MHz EM S E NG hFE-1 Classifications R CONDITIONS Inchange Semiconductor Product Specification 2SC3181N Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3181N Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC