ISC 2SA1987

Inchange Semiconductor
Product Specification
2SA1987
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PL package
・Complement to type 2SC5359
・High collector voltage
APPLICATIONS
・Power amplifier applications
・Recommended for 100W high fidelity audio
frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
-230
V
VCEO
Collector-emitter voltage
Open base
-230
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-15
A
IB
Base current
-1.5
A
PC
Collector power dissipation
180
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA1987
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-8A ;IB=-0.8A
-1.5
-3.0
V
VBE
Base-emitter voltage
IC=-7A ; VCE=-5V
-1.0
-1.5
V
ICBO
Collector cut-off current
VCB=-230V; IE=0
-5
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
hFE-2
DC current gain
IC=-7A ; VCE=-5V
35
Transition frequency
IC=-1A ; VCE=-5V
30
MHz
Collector output capacitance
IE=0,f=1MHz;VCB=-10V
360
pF
fT
COB
‹
CONDITIONS
hFE-1 classifications
R
O
55-110
80-160
2
MIN
TYP.
MAX
-230
UNIT
V
160
Inchange Semiconductor
Product Specification
2SA1987
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3