Inchange Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 230 V VCEO Collector-emitter voltage Open base 230 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 1.5 A PC Collector power dissipation 180 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=8 A;IB=0.8A 0.4 3.0 V VBE Base-emitter voltage IC=7A ; VCE=5V 1.0 1.5 V ICBO Collector cut-off current VCB=230V ;IE=0 5 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=7A ; VCE=5V 35 fT Transition frequency IC=1A ; VCE=5V 30 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 200 pF CONDITIONS hFE-1 classifications R O 55-110 80-160 2 MIN TYP. MAX 230 UNIT V 160 Inchange Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50mm) 3 Inchange Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors 4