Inchange Semiconductor Product Specification 2SC3322 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(I) package ・High voltage ・High speed APPLICATIONS ・High power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL OND VALUE UNIT 900 V 800 V 7 V Collector current 5 A ICM Collector current-peak 10 A IB Base current 2.5 A PT Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCBO VCEO VEBO IC PARAMETER R O T UC CONDITIONS C I M E S E NG Collector-base voltage A H C IN Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector TC=25℃ Inchange Semiconductor Product Specification 2SC3322 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,L=100mH;RBE=∞ V(BR)EBO Base-emitter breakdown voltage IE=10mA; IC=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBE sat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=750V; IE=0 100 μA ICEO Collector cut-off current VCE=650V; RBE=∞ 100 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 7 Switching times ton tstg tf CONDITIONS 体 导 半 固电 EM S E NG Turn-on time A H C IN Storage time 2 TYP. MAX UNIT 800 V 7 V R O T UC D N O IC IC=3A ; VCC≈250V IB1=0.6A; IB2=-1.5A Fall time MIN 1.0 μs 3.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3322 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 R O T UC