SavantIC Semiconductor Product Specification 2SC3336 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·High voltage,high speed APPLICATIONS ·For high voltage ; high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 15 A ICM Collector current-peak 25 A IB Base current 7.5 A PT Total power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3336 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,RBE=9;L=100mH 400 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=7.5A; IB=1.5A 1.0 V VBE sat Base-emitter saturation voltage IC=7.5A; IB=1.5A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 50 µA ICEO Collector cut-off current VCE=350V; RBE=9 50 µA hFE-1 DC current gain IC=7.5A ; VCE=5V 12 hFE-2 DC current gain IC=15A ; VCE=5V 5 0.5 µs 1.5 µs 0.5 µs Switching times ton Turn-on time tstg Storage time tf IC=15A ; VCC=150V IB=-IB=3.0A Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SC3336 SavantIC Semiconductor Product Specification 2SC3336 Silicon NPN Power Transistors 4