Inchange Semiconductor Product Specification 2SC3465 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ・Fast switching speed APPLICATIONS ・For switching regulator applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 体 导 半 Absolute maximum ratings(Ta=℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER EM S E NG D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1100 V Collector-emitter voltage Open base 800 V Emitter-base voltage Open collector 7 V 12 A 160 W A H C IN IC Collector current PT Total power dissipation Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3465 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0; 1100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=6A;IB=1.2A 2.0 V VBEsat Base-emitter saturation voltage IC=6A;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 μA IEBO Emitter cut-off current VEB=7V;IC=0 10 μA hFE-1 DC current gain hFE-2 fT 固电 COB 体 导 半 DC current gain Transition freuquency CONDITIONS A H C IN 10 IC=4A ;VCE=5V 10 L M 10-20 15-30 20-40 MAX UNIT D N O IC 40 IC=0.8A ;VCE=10V 15 MHz IE=0 ;VCB=10V,f=1MHz 240 pF hFE-1 classifications K TYP. R O T UC IC=0.8A ;VCE=5V EM S E NG Collector output capacitance MIN 2 Inchange Semiconductor Product Specification 2SC3465 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC