ISC 2SC2913

Inchange Semiconductor
Product Specification
2SC2913
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·High breakdown voltage
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
IB
Base current
3
A
PT
Total power dissipation
40
W
Tj
Junction temperature
175
℃
Tstg
Storage temperature
-55~175
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2913
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ; RBE=∞
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=7A; IB=1.4A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=7A; IB=1.4A
2.0
V
ICBO
Collector cut-off current
VCB=400V ;IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=3A ; VCE=5V
2
MIN
12
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SC2913
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3