Inchange Semiconductor Product Specification 2SC4880 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 900 V VEBO Emitter-base voltage Open collector 5 V 12 A 100 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4880 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ V(BR )EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=10A; IB=2.5 A 5.0 V VBEsat Base-emitter saturation voltage IC=10A; IB=2.5 A 1.5 V ICES Collector cut-off current VCE=1700V;RBE=0 500 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=5V 2 MIN TYP. MAX UNIT 900 V 5 V 8 40 Inchange Semiconductor Product Specification 2SC4880 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3