ISC 2SC5386

Inchange Semiconductor
Product Specification
2SC5386
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3P(H)IS package
・High voltage;high speed
・Low collector saturation voltage
APPLICATIONS
・Horizontal deflection output for high
resolution display,color TV
・High speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
8
A
ICM
Collector current-Peak
16
A
IB
Base current
4
A
PC
Total power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC5386
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=1.5A
3.0
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.5A
1.5
V
ICBO
Collector cut-off current
VCB=1500V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
35
hFE-2
DC current gain
IC=6A ; VCE=5V
4.3
7.5
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
105
pF
Transition frequency
IE=0.1A ; VCE=10V
1.7
MHz
fT
CONDITIONS
MIN
TYP.
MAX
600
UNIT
V
Switching times
ts
tf
Storage time
Fall time
ICP=5A;IB1(end)=1.0A
fH =64kHz
2
2.5
3.5
μs
0.15
0.3
μs
Inchange Semiconductor
Product Specification
2SC5386
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Inchange Semiconductor
Product Specification
2SC5386
Silicon NPN Power Transistors
4