isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1032 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V 2 V ICEO Collector Cutoff Current VCE= 30V ; IB= 0 700 μA ICES Collector Cutoff Current VCE= 60V ; VBE= 0 400 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 40 hFE-2 DC Current Gain IC= 3A ; VCE= 4V 15 60 UNIT V B 250 Switching times ton Turn-On Time 0.2 μs 1.4 μs IC= 4A ,IB1= -IB2= 0.4A toff Turn-Off Time hFE-1 Classifications R Q P 40-90 70-150 120-250 isc Website：www.iscsemi.cn 2