Inchange Semiconductor Product Specification 2SD2148 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・High speed switching power supply output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 4 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD2148 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=5mA , IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA , IC=0 5 V VCE(sat) Collector-emitter saturation voltage IC=7A ;IB=1.4A 5.0 V VBE(sat) Base-emitter saturation voltage IC=7A ;IB=1.4A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=7A ; VCE=5V 4 2 MIN TYP. MAX UNIT Inchange Semiconductor Product Specification 2SD2148 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions(unindicated tolerance:±0.10 mm) 3