Inchange Semiconductor Product Specification 2SD1541 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PFa package ·High voltage ,and high reliability ·Built-in damper diode ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector VALUE UNIT 1500 V 5 V IC Collector current 3 A ICM Collector current-peak 10 A IBM Base current 3.5 A PC Collector power dissipation 50 W Tj Junction temperature 130 ℃ Tstg Storage temperature -55~130 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1541 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.75A 5.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.75A 1.5 V VCB=750V; IE=0 50 μA VCB=1500V; IE=0 1 mA ICBO 5 UNIT V Collector cut-off current hFE DC current gain IC=2A ; VCE=10V VF Diode forward voltage IC=-4A 4 12 2.2 V 7.0 μs 0.75 μs Switching times tstg Storage time 3.0 IC=2A IBend=0.75A;LLeak=5μH tf Fall time 2 Inchange Semiconductor Product Specification 2SD1541 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3