Inchange Semiconductor Product Specification BD534/536/538 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD533/535/537 ・Low saturation voltage APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 固 Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD534 VCBO VCEO EMIC S E G N Collector-base voltage A H C IN Collector-emitter voltage BD536 Open emitter- Emitter-base voltage VALUE -60 -80 BD534 -45 BD536 Open base UNIT -45 BD538 BD538 VEBO R O T UC OND CONDITIONS -60 V V -80 Open collector -5 V IC Collector current -8 A IE Emitter current -8 A IB Base current -1 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD534/536/538 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat-1 Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A VCEsat-2 Collector-emitter saturation voltage IC=-6 A;IB=-0.6 A Base-emitter on voltage IC=-2A ; VCE=-2V VBE ICBO ICES IEBO hFE-1 Collector cut-off current Collector cut-off current BD536 VCB=-60V; IE=0 BD538 VCB=-80V; IE=0 BD534 VCE=-45V; VBE=0 BD536 VCE=-60V; VBE=0 BD538 VCE=-80V; VBE=0 导体 半 电 固 hFE-3 DC current gain (All device) VEB=5V; IC=0 S E G AN INCH DC current gain (All device) Transition frequency UNIT -0.8 V V -1.5 V -0.1 mA -0.1 mA -1 mA OND EMIC IC=-0.5A ; VCE=-2V MAX R O T UC 20 IC=-10mA ; VCE=-5V BD538 Group: J TYP. -0.8 BD534/536 DC current gain DC current gain fT VCB=-45V; IE=0 Emitter cut-off current hFE-2 hFE-4 BD534 MIN 15 40 30 75 40 100 IC=-2A ; VCE=-2V Group: K Group: J 15 IC=-3A ; VCE=-2V Group: K 20 IC=-0.5A ; VCE=-1V 2 3 12 MHz Inchange Semiconductor Product Specification BD534/536/538 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3