ISC 2SB707

Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB707 2SB708
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD568/569
APPLICATIONS
・For low frequency power amplifier
low speed switching industrial use
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
2SB707
Emitter-base voltage
UNIT
-80
V
-60
Open base
2SB708
VEBO
VALUE
V
-80
Open collector
-7
V
IC
Collector current
-7
A
ICM
Collector current-peak
-15
A
IB
Base current
-3.5
A
PC
Collector power dissipation
Ta=25℃
1.5
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB707 2SB708
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SB707
V(BR)CEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
-60
IC=-10mA; IB=0
2SB708
V
-80
VCEsat
Collector-emitter saturation voltage
IC=-5A;IB=-0.5 A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-5A;IB=-0.5 A
-1.5
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE-1
DC current gain
IC=-3A ; VCE=-1V
40
hFE-2
DC current gain
IC=-5A ; VCE=-1V
20
‹
hFE-2 classifications
R
O
Y
40-80
60-120
100-200
2
200
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB707 2SB708
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3