ISC 2SC789

Inchange Semiconductor
Product Specification
2SC789
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Low collector saturation voltage
APPLICATIONS
・For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
70
V
VCEO
Collector-emitter voltage
Open base
70
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
4
A
IB
Base current
1
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC789
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25m A;IB=0
70
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=2 A;IB=0.2 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2 A;IB=0.2 A
1.5
V
ICBO
Collector cut-off current
VCB=70V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=0.5A ; VCE=5V
40
Transition frequency
IC=0.5A ; VCE=10V
3
fT
‹
CONDITIONS
hFE classifications
O
R
Y
40-80
70-140
120-240
2
MIN
TYP.
MAX
UNIT
240
MHz
Inchange Semiconductor
Product Specification
2SC789
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3