isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 ·Complement to Type BDT82/84/86/88 APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BDT81 60 BDT83 80 BDT85 100 BDT87 120 BDT81 60 BDT83 80 BDT85 100 BDT87 120 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current 4 A PC Collector Power Dissipation TC=25℃ 125 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81/83/85/87 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT81 VCEO(SUS) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT 60 BDT83 80 IC= 30mA; IB= 0 V BDT85 100 BDT87 120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A 1.6 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 4V 1.5 V ICES Collector Cutoff Current VCE= 0.8VCBOmax; VBE= 0 1 mA ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 50mA ; VCE= 10V 40 hFE-2 DC Current Gain IC= 5A ; VCE= 4V 40 Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V fT B B 10 MHz Switching Times ton Turn-On Time toff Turn-Off Time 1 μs 2 μs IC= 7A; IB1= -IB2= 0.7A isc Website：www.iscsemi.cn