isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F DESCRIPTION ·DC Current Gain: hFE= 40(Min)@ IC= 150mA ·Complement to Type BD934F/936F/938F/940F/942F APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BD933F 45 BD935F 60 BD937F 100 BD939F 120 BD941F 140 BD933F 45 BD935F 60 BD937F 80 BD939F 100 BD941F 120 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 7 A 0.5 A 19 W 150 ℃ -65~150 ℃ IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 4.17 ℃/W 55 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BD933F 45 BD935F 60 BD937F IC= 100mA ; IB= 0 TYP. MAX V 80 BD939F 100 BD941F 120 UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.6 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 2V 1.3 V ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ 0.1 3.0 mA ICEO Collector Cutoff Current VCE= VCEOmax; IB= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 150mA ; VCE= 2V 40 hFE-2 DC Current Gain IC= 1A ; VCE= 2V 25 Current-Gain—Bandwidth Product IC= 250mA ; VCE= 10V 3 fT B 250 MHz Switching Times ton Turn-On Time toff Turn-Off Time 0.4 1.0 μs 1.5 3.0 μs IC= 1.0A; IB1= -IB2= 0.1A isc Website：www.iscsemi.cn 2