isc Product Specification INCHANGE Semiconductor isc Silicon Darlington NPN Power Transistor DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage: VCE(sat)= 2.0V @ IC= 4A APPLICATIONS ·Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCER(SUS) Collector-Emitter Voltage VCER Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 400 V s c s i . w w w 425 450 V V 5 V 7 A IC Collector Current IB Base Current 2 A PC Collector Power Dissipation @TC=25℃ 75 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W isc Website：www.iscsemi.cn BU522A isc Product Specification INCHANGE Semiconductor isc Silicon Darlington NPN Power Transistor BU522A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCER(SUS) Collector-Emitter Sustaining Voltage IC= 1.0A; RBE= 270Ω VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 80mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 80mA 2.5 V ICER Collector Cutoff Current VCR= 400V; RBE= 270Ω 1.0 mA ICBO Collector Cutoff Current VCB= 450V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 40 mA hFE DC Current Gain fT COB CONDITIONS n c . i m e s c s .i w isc Website：www.iscsemi.cn MAX 400 UNIT V B ww Output Capacitance TYP. B IC= 2.5A; VCE= 5V Current-Gain—Bandwidth Product MIN 250 IC= 0.3A; VCE= 5V 7.5 MHz IE= 0; VCB= 10V; ftest= 0.1MHz 150 pF