isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor MJE171 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -60V ·DC Current Gain— : hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A ·Complement to Type MJE181 APPLICATIONS ·Low power audio amplifier applications. ·Low current high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-peak -6 A Base Current -1 A Collector Power Dissipation Ta=25℃ 1.5 Collector Power Dissipation TC=25℃ 12.5 Junction Temperature 150 ℃ -65~150 ℃ IB B PC Ti Tstg Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 10 ℃/W 83.4 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor MJE171 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-1.5A ;IB= -0.15 A -0.9 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -3A ;IB=-0.6 A -1.7 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -3A; IB= -0.6A -2.0 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -1V -1.2 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 VCB= -80V; IE= 0;TC= 150℃ -0.1 -0.1 μA mA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -0.1 μA hFE-1 DC Current Gain IC= -0.1 A ; VCE= -1V 50 hFE-2 DC Current Gain IC= -0.5A ; VCE= -1V 30 hFE-3 DC Current Gain IC= -1.5 A ; VCE= -1V 12 Current-Gain—Bandwidth Product IC= -0.1 A; VCE= -10V; 50 Output Capacitance IE= 0; VCB= -10V;ftest= 0.1MHz fT COB isc Website：www.iscsemi.cn CONDITIONS MIN MAX -60 B B UNIT V 250 MHz 60 pF