Inchange Semiconductor Product Specification BUS12 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage,high speed APPLICATIONS ・Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 Absolute maximum ratings (Ta=25℃) 固 SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC PT CONDITIONS Open emitter M E S E ANG INCH Emitter-base voltage D N O IC Open base Open collector Collector current Total power dissipation TC=25℃ R O T UC VALUE UNIT 850 V 400 V 10 V 8 A 125 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.17 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BUS12 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; L=25mH 400 V(BR)EBO Emitter-base breakdown voltage IE=10m A;IC=0 10 VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=1 A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8 A;IB=2.5 A 3.0 V VBEsat-1 Base-emitter saturation voltage IC=5 A;IB=1 A 1.4 V VBEsat-2 Base-emitter saturation voltage IC=8 A;IB=2.5 A 1.8 V ICES Collector cut-off current VCE=850V;VBE=0 TC=125℃ 1.0 3.0 mA IEBO Emitter cut-off current VEB=10V; IC=0 1.0 mA hFE CONDITIONS 导体 半 电 固 DC current gain IC=1A ; VCE=5V MIN N A H INC 2 MAX 15 UNIT V R O T UC D N O IC M E S GE TYP. Inchange Semiconductor Product Specification BUS12 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3