Inchange Semiconductor Product Specification BUX80 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage ・Fast switching speed APPLICATIONS ・Switching regulators ・Motor control ・High frequency and efficiency converters PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 体 导 半 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) 固电 SYMBOL EM S E G N A H D N O IC VALUE UNIT Open emitter 800 V Collector-emitter voltage Open base 400 V Emitter-base voltage Open collector 10 V Collector current 10 A ICM Collector current-peak 15 A IB Base current 5 A PT Total power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.1 ℃/W VCBO VCEO VEBO IC PARAMETER R O T UC Collector-base voltage INC TC=25℃ CONDITIONS THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BUX80 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=1 A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8 A;IB=2.5 A 3.0 V VBEsat-1 Base-emitter saturation voltage IC=5 A;IB=1 A 1.4 V VBEsat-2 Base-emitter saturation voltage IC=8 A;IB=2.5 A 1.8 V ICES Collector cut-off current VCE=800V;VBE=0 TC=125℃ 1.0 3.0 mA IEBO Emitter cut-off current VEB=10V; IC=0 10 mA hFE DC current gain ton ts tf 体 导 半 固电 Switching times Turn-on time 2 TYP. MAX UNIT V R O T UC D N O IC IC=5A ;IB1=1A; IB2=-2A VCC=-250V Fall time MIN 400 IC=1.2A ; VCE=5V EM S E NG A H C IN Storage time CONDITIONS 30 0.5 μs 3.5 μs 0.5 μs Inchange Semiconductor Product Specification BUX80 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC