Inchange Semiconductor Product Specification BUT12F BUT12AF Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS BUT12F VCBO Collector-base voltage 400 Open base BUT12AF VEBO Emitter-base voltage V 1000 BUT12F Collector-emitter voltage UNIT 850 Open emitter BUT12AF VCEO VALUE V 450 Open collector 9 V IC Collector current 8 A ICM Collector current-peak 20 A IB Base current 4 A IBM Base current-peak 6 A Ptot Total power dissipation 23 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 55 K/W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient Inchange Semiconductor Product Specification BUT12F BUT12AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUT12F VCEO(SUS) Collector-emitter sustaining voltage BUT12F VBEsat ICES TYP. MAX Collector-emitter saturation voltage V 450 IC=6A; IB=1.2A BUT12AF IC=5A; IB=1A BUT12F IC=6A; IB=1.2A Base-emitter saturation voltage 1.5 V 1.5 V BUT12AF IC=5A; IB=1A BUT12F VCE=850V ;VBE=0 Tj=125℃ 1.0 3.0 BUT12AF VCE=1000V ;VBE=0 Tj=125℃ 1.0 3.0 10 Collector cut-off current UNIT 400 IC=0.1A; IB=0;L=25mH BUT12AF VCEsat MIN mA IEBO Emitter cut-off current VEB=9V; IC=0 hFE-1 DC current gain IC=10mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1A ; VCE=5V 10 35 mA Switching times resistive load ton Turn-on time ts Storage time tf Fall time For BUT12F IC=6A;IB1=-IB2=1.2A;VCC=250V For BUT12AF IC=5A;IB1=-IB2=1A;VCC=250V 2 1.0 μs 4.0 μs 0.8 μs Inchange Semiconductor Product Specification BUT12F BUT12AF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3