JMNIC 2SA1051

JMnic
Product Specification
2SA1051
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・High transition frequency
・Excellent safe operating area
APPLICATIONS
・For audio and general purpose
power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-15
A
IB
Base current
-1.5
A
PC
Collector power dissipation
150
W
Tj
Junction temperature
175
℃
Tstg
Storage temperature
-55~200
℃
TC=25℃
JMnic
Product Specification
2SA1051
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
-150
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-5
V
Collector-emitter saturation voltage
IC=-10A; IB=-1A
-3.0
V
VBE
Base-emitter on voltage
IC=-8A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-140V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
hFE-2
DC current gain
IC=-8A ; VCE=-5V
35
Transition frequency
IC=-1A ; VCE=-10V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
160
60
MHz
JMnic
Product Specification
2SA1051
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3