JMNIC 2SA1062

JMnic
Product Specification
2SA1062
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PN package
・Complement to type 2SC2486
・High collector power dissipation
APPLICATIONS
・High power audio frequency amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-7
A
ICM
Collector current-peak
-12
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1062
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
V
VBE
Base-emitter on voltage
IC=-5A;VCE=-5V
-1.8
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-50
μA
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
20
hFE-2
DC current gain
IC=-1A ; VCE=-5V
40
hFE-3
DC current gain
IC=-5A ; VCE=-5V
20
Transition frequency
IC=-0.5A ; VCE=-5V
fT
‹
CONDITIONS
hFE-2 Classifications
R
Q
P
40-80
60-120
100-200
2
MIN
TYP.
MAX
-120
UNIT
V
200
20
MHz
JMnic
Product Specification
2SA1062
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3