JMNIC 2SB509

JMnic
Product Specification
2SB509
Silicon PNP Power Transistors
DESCRIPTION
・With TO-66 package
・Complement to type 2SD315
APPLICATIONS
・For use in audio frequency power
amplifier application
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-4
A
ICM
Collector current-peak
-10
A
PC
Collector power dissipation
35
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-40~150
℃
TC=25℃
JMnic
Product Specification
2SB509
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.0
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-2V
-1.5
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
40
hFE-2
DC current gain
IC=-0.1A ; VCE=-2V
40
Transition frequency
IC=-0.5A ; VCE=-5V
fT
CONDITIONS
‹ hFE-1 Classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
MIN
TYP.
MAX
-60
UNIT
V
320
8
MHz
JMnic
Product Specification
2SB509
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3