JMNIC 2SA1327

JMnic
Product Specification
2SA1327
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Low collector saturation voltage
・High current capacity
APPLICATIONS
・Strobe flash applications
・Audio power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
V
VCBO
Collector-base voltage
Open emitter
-50
VCEO
Collector-emitter voltage
Open base
-20
VEBO
Emitter-base voltage
Open collector
-8
V
V
IC
Collector current
-10
A
ICM
Collector current-peak
-20
A
IB
Base current
-2
A
PC
Collector power dissipation
TC=25℃
20
W
Ta=25℃
2
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SA1327
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA , IB=0
VCEsat
Collector-emitter saturation voltage
IC=-8A; IB=-0.4A
-0.5
V
VBE
Base-emitter on voltage
IC=-8A ; VCE=-2V
-1.5
V
ICBO
Collector cut-off current
VCB=-50V;IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-8V; IC=0
-1.0
μA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
100
hFE -2
DC current gain
IC=-8A ; VCE=-2V
70
COB
Output capacitance
IE=0 ; VCB=-10V; f=1MHz
400
pF
fT
Transition frequency
IC=-1A ; VCE=-2V
45
MHz
‹
CONDITIONS
hFE-1 Classifications
O
Y
100-200
160-320
2
MIN
TYP.
MAX
-20
UNIT
V
320
JMnic
Product Specification
2SA1327
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
JMnic
Product Specification
2SA1327
Silicon PNP Power Transistors
4