JMNIC 2SB1371

JMnic
Product Specification
2SB1371
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-3PFa package
・Complement to type 2SD2064
・High transition frequency
・Satisfactory linearity of hFE
APPLICATIONS
・For high power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-6
A
ICM
Collector current-peak
-10
A
PC
Collector power dissipation
TC=25℃
70
W
Ta=25℃
3
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1371
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBE
‹
CONDITIONS
MAX
UNIT
IC=-4A ;IB=-0.4A
-2.0
V
Base-emitter on voltage
IC=-4A ; VCE=-5V
-1.8
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-50
μA
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
20
hFE -2
DC current gain
IC=-1A ; VCE=-5V
60
hFE -3
DC current gain
IC=-4A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V;f=1.0MHz
150
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V;f=1.0MHz
15
MHz
hFE-2 classifications
Q
S
P
60-120
80-160
100-200
2
MIN
TYP.
200
JMnic
Product Specification
2SB1371
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
JMnic
Product Specification
2SB1371
Silicon PNP Power Transistors
4