JMnic Product Specification 2SB1162 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD1717 ・Excellent linearity of hFE ・Wide area of safe operation (ASO) ・High transition frequency fT APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A ICM Collector current-peak -20 A PC Collector power dissipation 3.5 W TC=25℃ 120 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1162 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE MAX UNIT IC=-8A ;IB=-0.8A -2.0 V Base-emitter voltage IC=-8A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-160V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 60 hFE-3 DC current gain IC=-8A ; VCE=-5V 20 Transition frequency IC=-0.5A ; VCE=-5V 20 MHz Collector output capacitance f=1MHz;VCB=-10V 210 pF fT COB CONDITIONS hFE-2 classifications Q S P 60-120 80-160 100-200 2 MIN TYP. 200 JMnic Product Specification 2SB1162 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3