JMnic Product Specification 2SC3409 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・Fast switching speed ・Wide area of safe operation APPLICATIONS ・For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 10 V 2 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC3409 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A 5.0 V VBEsat Base-emitter saturation voltage IC=1.5A;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=0.5A ; VCE=4V 2 MIN 15 TYP. MAX UNIT JMnic Product Specification 2SC3409 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3