JMNIC 2SB686

JMnic
Product Specification
2SB686
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3P(I) package
・Complement to type 2SD716
APPLICATIONS
・Power amplifier applications
・Recommend for 30~35W high-fidelity
audio frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-6
A
IE
Emitter current
6
A
PT
Total power dissipation
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB686
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ,IB=0
-100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10mA ,IC=0
-5
V
Collector-emitter saturation voltage
IC=-4A; IB=-0.4A
-2.0
V
VBE
Base-emitter voltage
IC=-4A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE
DC current gain
IC=-1A ; VCE=-5V
Transition frequency
IC=-1A ; VCE=-5V
10
MHz
Collector output capacitance
IE=0 ; VCB=-10V ;f=1MHz
270
pF
VCEsat
fT
Cob
‹
CONDITIONS
hFE Classifications
R
O
55-110
80-160
2
MIN
TYP.
55
MAX
UNIT
160
JMnic
Product Specification
2SB686
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
2SB686
Silicon PNP Power Transistors
4