Product Specification www.jmnic.com 2SD1789 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current ±4 A ICM Collector current-Peak ±6 A IB Base current 0.3 A IBM Base current-Peak 0.5 A PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Vdis Dielectric strength Terminals to case,AC 1 minute 2 kV TOR Mounting torque (Recommended torque:0.3N·m) 0.5 N·m MAX UNIT 5.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2SD1789 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=1A; IB=2mA 1.5 V VBEsat Emitter-base saturation voltage IC=1A; IB=2mA 2.0 V ICBO Collector cut-off current VCB=200V 0.1 mA ICEO Collector cut-off current VCE=200V 0.1 mA IEBO Emitter cut-off current VEB=7V 5 mA hFE DC current gain IC=1A ; VCE=3V fT Transition frequency IC=0.4A ; VCE=10V ton Turn-on time ts Storage time tf Fall time IC=1A;IB1=IB2=2mA, RL=25Ω VBB2=4V JMnic 1500 30000 20 MHz 2.0 μs 12 μs 5.0 μs Product Specification www.jmnic.com 2SD1789 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) JMnic