JMNIC BUV46A

Product Specification
www.jmnic.com
BUV46A
Silicon Power Transistors
・
DESCRIPTION
・With TO-220C package
・High voltage
・Fast switching
APPLICATIONS
・General purpose switching
・Switch mode power supplies
・Electronic ballasts for
fluorescent lighting
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
emitter
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
5
A
IB
Base current
3
A
70
W
150
℃
-65~150
℃
Max
UNIT
1.76
℃/W
Ptot
Tj
Tstg
TC=25℃
Total power dissipation
Max.operating junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
Rth j-case
PARAMETER
Thermal resistance junction case
JMnic
Product Specification
www.jmnic.com
BUV46A
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
450
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
V
VCEsat-1
Collector-emitter saturation voltage
IC=2A IB=0.4A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=3A IB=0.6A
5.0
V
VBEsat-1
Emitter-base saturation voltage
IC=2A IB=0.4A
1.3
V
ICBO
Collector cut-off current
VCB=BVCBO IE=0
TC=125℃
0.3
2
mA
IEBO
Emitter cut-off current
VEB=7V IC=0
1
mA
1.0
μs
3.0
μs
0.8
μs
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A IB1=- IB2=0.4A
VCC=150V
JMnic
Product Specification
www.jmnic.com
BUV46A
Silicon Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
JMnic