Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1179 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High breakdown voltage 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -55 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Collector dissipation PC 200 mW Jumction temperature Tj 150 Storage temperature Tstg -50 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC = -10ìA , IE = 0A -55 Collector-emitter breakdown voltage VCEO IC = -1mA , RBE = -50 V Emitter-base breakdown voltage VEBO IE = -10ìA , IC = 0A -5 V Collector cutoff current ICBO VCB = -35V , IE = 0A Emitter cutoff current IEBO VEB = -4V , IC = 0 DC current Gain hFE VCE = -6V , IC = -1mA Collector-emitter saturation voltage VCE(sat) IC = -50mA , IB = -5mA Base-emitter saturation voltage VBE(sat) IC = -50mA , IB = -5mA Output capacitance Cob Transition frequency fT V 200 -0.1 A -0.1 A 400 -0.5 -1.0 V V VCB = -6V , IE=0 ,f = 1MHz 4.0 pF VCE = -6V , IC = -10mA 180 MHz Marking Marking M www.kexin.com.cn 1