KEXIN KC818W

Transistors
SMD Type
NPN Silicon AF Transistors
KC818W(BC818W)
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
500
mA
Peak collector current
ICM
1
A
Base current
IB
100
mA
power dissipation
PD
250
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-to-base breakdown voltage
VCBO
IC = 10
A, IE = 0
30
V
Collector-to-emitter breakdown voltage
VCEO
IC = 10 mA, IB = 0
25
V
Emitter-to-base breakdown voltage
VEBO
IE = 10
5
A, IC = 0
V
VCB = 25 V, IE = 0
100
nA
Collector cutoff current
ICBO
VCB = 25 V, IE = 0 , TA = 150
50
A
Emitter cutoff current
IEBO
VEB = 4 V, IC = 0
100
nA
hFE
IC = 100 mA, VCE = -1 V
KC818-16W
DC current gain *
KC818-25W
KC818-40W
100
160
250
160
250
400
250
350
630
Collector saturation voltage *
VCE(sat) IC = 500 mA, IB = 50 mA
0.7
Base to emitter voltage *
VBE(sat) IC = 500 mA, IB = 50 mA
1.2
V
V
Collector-base capacitance
CCb
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
VEB = 0.5 V, f = 1 MHz
60
pF
IC = 50 mA, VCE = 5 V, f = 100 MHz
170
MHz
Transition frequency
* Pulsed: PW
fT
350 ìs, duty cycle
6
pF
2%
Marking
NO.
KC818-16W
KC818-25W
KC818-40W
Marking
6E
6F
6G
www.kexin.com.cn
1