KEXIN 2SA1213

Transistors
SMD Type
Power Switching Applications
2SA1213
Features
Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)
High Speed Switching Time: tstg = 1.0ìs(typ.)
Small Flat Package
PC = 1 to 2W (mounted on ceramic substrate)
Complementary to 2SC2873
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-Base Voltage
Parameter
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-2
A
Base Current
IB
-0.4
A
PC
500
PC *
1000
Tj
150
Tstg
-55 to +150
Collector Power Dissipation
Jumction temperature
Storage temperature Range
mW
2
* Mounted on ceramic substrate (250 mm x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Symbol
Testconditons
ICBO
VCB = -50V , IE = 0
IEBO
VEB = -5V , IC = 0
V(BR)CEO IC = -10mA , IB = 0
hFE
Min
Typ
Max
Unit
-0.1
ìA
-0.1
ìA
-50
VCE = -2V , IC = -0.5A
70
VCE = -2V , IC = -2.0A
20
V
240
Collector-Emitter Saturation Voltage
VCE(sat) IC = -1A , IB = -0.05A
-0.5
V
Base-Emitter Saturation Voltage
VBE(sat) IC = -1A , IB = -0.05A
-1.2
V
Transition Frequency
fT
Collector Output Capacitance
Cob
Turn-On Time
ton
Storage Time
tstg
Fall Time
tf
VCE = -2V , IC = -0.5A
120
MHz
VCB = -10V , IE = 0 , f = 1MHz
40
pF
0.1
See Test Circuit.
1.0
ìs
0.1
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Transistors
SMD Type
2SA1213
Test Circuit
hFE Classification
N
Marking
Rank
hFE
O
70
Y
140
120
Electrical Characteristics Curves
2
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240
Transistors
SMD Type
2SA1213
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