KEXIN 2SA1734

Transistors
IC
SMD Type
Silicon PNP Epitaxial
2SA1734
Features
Low saturation voltage: VCE(sat) = -0.5 V (max) (IC = -700 mA).
High speed switching time: tstg = 0.2ìs (typ.).
Small flat package.
PC = 1.0 to 2.0 W (mounted on ceramic substrate).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-40
V
Collector-emitter voltage
VCEO
-30
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-2
A
Base current
IB
-1.2
A
PC
500
PC *
1000
Tj
150
Tstg
-55 to +150
Collector power dissipation
Junction temperature
Storage temperature range
mW
2
* Mounted on ceramic substrate (250 mm X 0.8 t)
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Transistors
IC
SMD Type
2SA1734
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = -40 V, IE = 0
-0.1
ìA
Emitter cut-off current
IEBO
VEB = -6 V, IC = 0
-0.1
ìA
Collector-emitter breakdown voltage
V(BR)CEO IC = -10 mA, IB = 0
hFE
DC current gain
VCE = -2 V, IC =-100 mA
120
40
VCE (sat) IC = -700 mA, IB = -35 mA
Base-emitter saturation voltage
VBE (sat) IC = -700 mA, IB = -35 mA
fT
-50
VCE = -2 V, IC = -1.0A
Collector-emitter saturation voltage
Transition frequency
V
400
-0.5
-1.2
V
V
VCE = -2 V, IC = -100 mA
100
MHz
VCB = -10 V, IE = 0, f = 1 MHz
16
pF
Collector output capacitance
Cob
Turn-on time
ton
0.1
ìs
Storage time
tstg
0.2
ìs
tf
0.1
ìs
Fall time
Marking
Marking
2
Testconditons
LB
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