Transistors SMD Type PNP Transistors 2SB1124 ■ Features 1.70 0.1 ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1624 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -3 Collector current -Pulse ICP -6 Collector Power Dissipation 0.5 PC (Note.1) TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature range 1.5 Unit V A W ℃ Note.1: Mounted on ceramic board (250mm 2 ×0.8mm) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， RBE=∞ -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -50V , IE=0 -1 Emitter cut-off current IEBO VEB= -5V , IC=0 -1 V Collector-emitter saturation voltage VCE(sat) IC=-2 A, IB=-100mA -0.35 -0.7 Base - emitter saturation voltage VBE(sat) IC=-2 A, IB=-100mA -0.94 -1.2 DC current gain hFE Turn-ON Time ton Storage Time tstg Fall Time VCE= -2V, IC= -100 mA 100 VCE= -2V, IC= -3 A 35 fT V 560 450 ns 35 Cob Transition frequency uA 70 See specified Test Circuit. tf Collector output capacitance Unit VCB = –10V, IE = 0, f = 1MHz 39 pF VCE= -10V, IC= -50mA 150 MHz ■ Classification of hfe(1) Type 2SB1124-R 2SB1124-S 2SB1124-T 2SB1124-U Range 100-200 140-280 200-400 280-560 BG R* BG S* BG T* BG U* Marking www.kexin.com.cn 1 Transistors SMD Type PNP Transistors Switching Time Test Circuit ■ Typical Characterisitics 2 www.kexin.com.cn 2SB1124 Transistors SMD Type PNP Transistors 2SB1124 ■ Typical Characterisitics www.kexin.com.cn 3