KEXIN 2SA1463

Transistors
IC
SMD Type
PNP Silicon Epitaxia
2SA1463
Features
High speed,high voltage switching.
Low Collector Saturation Voltage
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to base voltage
Parameter
VCBO
-60
V
Collecto to emitter voltage
VCEO
-45
V
Emitter to base voltage
VEBO
-5.0
V
Collector current(DC)
IC
-1.0
A
Collector current(Pulse)*
IC
-2.0
A
W
Total power dissipation
PT
20
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*.pw 10 ms,Duty Cycle 50%
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICES
VCE = -45V, RBE=0
-0.5
ìA
Emitter cutoff current
IEBO
VEB = -4V, IC=0
-0.5
ìA
hFE1
VCE = -10V , IC = -50mA
60
hFE2
VCE = -10V , IC = -500mA
60
DC current gain *
Testconditons
Collector-emitter saturation voltage *
VCE(sat) IC = -500mA , IB = -50mA
Base-emitter saturation voltage *
VBE(sat) IC = -500mA , IB = -50mA
Gain bandwidth product
fT
Output capacitance
Cob
Turn-on time
ton
Storage time
tstg
Turn-off time
toff
* Pulse test: tp
350 ìs; d
VCE = -10V , IE = 100mA
VCB = -10V , IE = 0 , f = 1.0MHz
IC = -500mA , IB1 = IB1 = -50mA
Min
300
Typ
200
-0.26
-0.6
-0.98
-1.2
400
V
V
MHz
11
25
pF
25
40
ns
46
70
ns
62
100
ns
0.02.
hFE Classification
Marking
1L
hFE
60 120
1K
100
200
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