KEXIN 2SD2230

Transistors
IC
SMD Type
NPN Silicon Epitaxia
2SD2230
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
Low VCE(sat).
1
0.55
High hFE and high current.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
16
V
Collector-emitter voltage
VCEO
16
V
Emitter-base voltage
VEBO
5
V
Collector current(dc)
ID
500
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current gain *
Base to emitter voltage *
Collector saturation voltage
Output capacitance
* Pulsed: PW
Typ
VCB = 16 V, IE = 0
VEB = 6.0 V, IC = 0
VCE = 1.0 V, IC = 100 mA
200
hFE 2
VCE = 1.0 V, IC = 500 mA
200
VBE
VCE = 1.0 V, IC = 10 mA
550
Max
Unit
100
nA
100
nA
700
mV
VCE(sat) 1 IC = 100 mA, IB = 10 mA
33
50
mV
VCE(sat) 2 IC = 500 mA, IB = 20 mA
150
200
mV
15
pF
fT
350 µs, duty cycle
Min
hFE 1
Cob
Gain bandwidth product
Testconditons
VCB = 10 V, IE = 0 , f = 1.0 MHz
VCE = 1.0 V, IE = -100 mA
50
MHz
2%
Marking
Marking
D46
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