KEXIN 2SC3624

Transistors
IC
SMD Type
NPN Silicon Epitaxial Transistor
2SC3624
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
High DC current Gain: hFE = 1000 to 3200.
0.4
3
1
0.55
Low VCE(sat): (VCE(sat) = 0.07 V TYP).
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
12
V
Collector current (DC)
IC
150
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
Tstg
-55 to +150
Storage temperature range
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 50V, IE=0
Testconditons
100
nA
Emitter cutoff current
IEBO
VEB = 10V, IC=0
100
nA
DC current gain *
hFE
VCE = 5V , IC = 1mA
Base-emitter voltage *
VBE
VCE = 5V , IC = 1mA
Collector-emitter saturation voltage *
VCE(sat) IC = 50mA , IB = 5mA
Base-emitter saturation voltage *
VBE(sat) IC = 50mA , IB = 5mA
Gain bandwidth product
fT
Output capacitance
VCE = 5V , IE = -10mA
Min
1000
Typ
1800
3200
0.56
V
0.07
0.3
0.8
1.2
V
V
250
MHz
3
pF
Cob
VCB = 5V , IE = 0 , f = 1.0MHz
Turn-on time
ton
VCC = 10V , VBE(off) = -2.7V
0.13
ns
Storage time
tstg
IC = 50mA ,
0.72
ns
Turn-off time
toff
IB1 = -IB2 = 1mA
1.22
ns
*. PW
350ìs,duty cycle 2%
hFE Classification
Marking
L17
L18
hFE
1000 2000
1600 3200
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