KEXIN 2SC4173

Transistors
IC
SMD Type
NPN Silicon Epitaxia
2SC4173
Features
High gain bandwidth product: fT=200MHz min.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 40V, IE=0
Testconditons
Min
100
nA
Emitter cutoff current
IEBO
VEB = 4V, IC=0
100
nA
hFE
VCE = 1V , IC = 150mA
150
300
Collector-emitter saturation voltage *
VCE(sat) IC = 500mA , IB = 50mA
0.25
0.75
V
Base-emitter saturation voltage *
VBE(sat) IC = 500mA , IB = 50mA
1.0
1.2
V
DC current gain *
Gain bandwidth product
fT
VCE = 10V , IE = -20mA
75
Typ
200
400
MHz
Output capacitance
Cob
VCB = 10V , IE = 0 , f = 1.0MHz
3.5
Turn-on time
ton
VCC = 30V ,
30
ns
Storage time
tstg
IC = 150mA ,
150
ns
Turn-off time
toff
IB1 = -IB2 = 15mA
180
ns
*. PW
8.0
pF
350ìs,duty cycle 2%
hFE Classification
Marking
B12
hFE
75 150
B13
100
200
B14
150
300
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