Transistors SMD Type Power Switching Applications 2SA1681 Features Low Saturation Voltage: VCE(sat) = -0.5V(max)(IC = -1A) High Speed Switching Time: tstg = 300ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SC4409 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current IC -2 A Base Current IB -0.2 A Collector Power Dissipation Jumction temperature Storage temperature Range PC 0.5 PC * 1 Tj 150 Tstg -55 to +150 W 2 * Mounted on a ceramic board (250 mm x 0.8 t) Electrical Characteristics Ta = 25 Max Unit Collector Cut-off Current Parameter ICBO VCB = -60V , IE = 0 -0.1 ìA Emitter Cut-off Current IEBO VEB = -6V , IC = 0 -0.1 ìA DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Emitter Breakdown Voltage Transition Frequency Collector Output Capacitance Symbol VCE = -2V , IC = -100mA 120 40 IC = 1A , IB = -0.05A VBE(sat) IC = 1A , IB = -0.05A V(BR)CEO IC = -10mA, IB = 0 fT Cob ton Storage Time tstg tf Min VCE = -2V , IC = -1.5A VCE(sat) Turn-ON Time Fall Time Testconditons Typ 400 -0.5 -1.2 -50 V V V VCE = -2V , IC = -100mA 100 MHz VCB = -10V , IE = 0, f = 1MHz 23 pF 0.1 See Test Circuit 0.3 ìs 0.1 www.kexin.com.cn 1 Transistors SMD Type 2SA1681 Test Circuit Marking Marking LA Electrical Characteristics Curves 2 www.kexin.com.cn Transistors SMD Type 2SA1681 www.kexin.com.cn 3