Transistors SMD Type Silicon PNP Epitaxial 2SB1026 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -120 V Collector to emitter voltage VCEO -100 V Emitter to base voltage VEBO -5 V IC -1 A iC(peak)*1 -2 A PC*2 1 W Collector current Collector peak current Collector power dissipation Junction temperature Tj 150 Storage temperature Tstg -55 to 150 *1 PW 10 ms, Duty cycle 20% *2 Value on the alumina ceramic board (12.5X 20X 0.7 mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = -10 ìA, IE = 0 -120 V Collector to emitter breakdown voltage V(BR)CEO IC = -1 mA, RBE = -100 V Emitter to base breakdown voltage V(BR)EBO IE = -10 ìA, IC = 0 -5 Collector cutoff current ICBO DC current transfer ratio hFE V VCB = -100 V, IE = 0 -10 VCE = -5 V, IC = -150mA, 60 VCE = -5 V, IC = -500mA 30 ìA 200 VCE(sat) IC = -0.5 A, IB = -50 mA, -1.0 V Base to emitter voltage VBE VCE = -5 V, IC = -150mA, -0.9 V Gain bandwidth product fT VCE = -5 V, IC = -150 mA 140 MHz VCB = -10 V, IE = 0,f = 1 MHz 20 pF Collector to emitter saturation voltage Collector output capacitance Cob hFE Classification Marking DL DM hFE 60 to 120 100 to 200 www.kexin.com.cn 1