KEXIN 2SC4215

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC4215
Features
Small reverse transfer capacitance: Cre = 0.55 pF (typ.)
Low noise figure: NF = 2dB (typ.) (f = 100 MHz)
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
20
mA
Base current
IB
4
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
Emitter cut-off current
IEBO
VEB = 4 V, IC = 0
DC current gain
hFE
VCE = 6 V, IC = 1 mA
Reverse transfer capacitance
Cre
VCB = 10 V, f = 1MHz
fT
VCE = 6 V, IC = 1 mA
Transition frequency
Collector-base time constant
Min
Typ
40
NF
Power gain
Gpe
Unit
0.1
ìA
0.5
ìA
200
0.55
260
2
VCC = 6V, IE = -1mA, f = 100MHz,
17
pF
550
Cc.rbb' VCB = 6 V, IE = -1mA, f = 30 MHz
Noise figure
Max
23
MHz
25
ps
5
dB
dB
hFE Classification
Marking
QR
QO
QY
hFE
40 80
70 140
100 200
www.kexin.com.cn
1