KEXIN 2SC5212

Transistors
SMD Type
Small Signal Transistor
2SC5212
Features
Low collector saturation voltage VCE(sat)=0.2V typ.
High fT fT=180MHz typ.
Excellent linearity of dc forward current gain.
High collector current ICM=1A.
Small package for mounting.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
25
V
Emitter-base voltage
VEBO
4
V
Collector-emitter voltage
VCEO
20
V
Peak collector current
ICM
1
A
Collector current
IC
700
mA
Collector dissipation
PC
500
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Colllector-base breakdown voltage
Testconditons
V(BR)CBO IC=10ìA,IE=0
Min
Typ
Max
Unit
25
V
Emitter-base breakdown voltage
V(BR)EBO IE=10ìA,IC=0
4
V
Collector-emitter breakdown voltage
V(BR)CEO IC=100ìA,RBE=
20
V
Collector cutoff current
ICBO
VCB=25V,IE=0
Emitter cutoff current
IEBO
VEB=2V,IC=0
DC current gain
hFE
VCE=4V,IC=100mA
VCE(sat) IC=500mA,IB=25mA
Collector-emitter saturation voltage
Gain bandwidth product
fT
VCE=6V,IE=-10mA
150
1
ìA
1
ìA
800
0.2
180
0.5
V
MHz
hFE Classification
Marking
UE
UF
UG
hFE
150 300
250 500
400 800
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