Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3143 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small output capacitance. 0.55 High breakdown voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V Collector current IC 80 mA Collector current (pulse) ICP 150 mA Collector dissipation PC 200 mW Jumction temperature Tj 125 Storage temperature Tstg -55 to +125 www.kexin.com.cn 1 Transistors SMD Type 2SC3143 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Collector cutoff current IcBO VCB = 120V , IE = 0 Emitter cutoff current IEBO VEB = 4V , IC = 0 DC current Gain hFE VCE = 5V , IC = 10 mA fT VCE = 10V , IC = 10 mA 150 2.0 Gain bandwidth product Output capacitance Cob VCB = 10V , f = 1MHz Base-emitter voltage VBE VCE = 5V , IC = 10 mA Collector-emitter saturation voltage 60 Max Unit 0.1 ìA 0.1 ìA 270 VCE(sat) IC = 30mA , IB = 3mA MHz 2.5 pF 1.5 V 0.7 V Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 180 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 160 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V Turn-on time ton 0.18 ìs Storage time tstg 1.0 ìs tf 0.2 ìs Fall time hFE Classification K Marking 2 Min Rank 3 4 5 hFE 60 120 90 180 135 270 www.kexin.com.cn