Transistors SMD Type PNP Epitaxial Planar Silicon Transistor 2SB1396 Features Adoption of FBET,MBIT processes Large current capacity Low collector to emitter saturation voltage Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -15 V Collector-emitter voltage VCEO -10 V Emitter-base voltage VEBO -7 V IC -3 A Collector current Collector current (Pulse) ICP -5 A Collector dissipation * PC * 1.3 W Junction temperature Tj 150 Tstg -55 to +150 Storage temperature 2 * Mounted on ceramic PCB (250mm X0.8mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -12V, IE=0 -100 ìA Emitter cutoff current IEBO VEB = -6V, IC=0 -100 ìA DC current Gain hFE Gain bandwidth product Output capacitance VCE =-2V , IC = -0.5A 140 VCE =-2V , IC = -3A 70 560 fT VCE =-2V , IC = -0.3A 400 GHz Cob VCE = -10V , f=1MHz 26 pF C-E Saturation Voltage VCE(sat) IC=-1.5A,IB=-30mA -220 -400 mV B-E Saturation Voltage VBE(sat) IC=-1.5A,IB=-30mA -0.9 -1.2 V C-B Breakdown Voltage V(BR)CBO IC=-10ìA,IE=0 -15 V C-E Breakdown Voltage V(BR)CEO IC=-1mA,RBE= -10 V E-B Breakdown Voltage V(BR)EBO IE=-10ìA,IC=0 -7 V hFE Classification BO Marking Rank S T U hFE 140 280 200 400 280 560 www.kexin.com.cn 1